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VGF Crystal Growth Furnace is mainly used forgrowth of Compound semiconductor mate-rials such as gaas, gaas and GE.


Characteristics of VGF Crystal Growth Furnace:
- Ten years experience in furnace body production technologylong life, stable temperature field.

- Self-development of the third generation of automatic liftingsystem for long crystal stability to enhance protection.

- High Precision Temperature control system, improve the rateof finished products.
- Super Safety Protection and alarm device.

VGF Crystal Growth Furnace

Technical Parameters

No. Product Parameters Technical Indicators
1 Furnace body structure. vertical
2 Type of furnace body Atmospheric pressure
3 Applicable size 2-6 inches (customizable)
4 Number of heating zones Generally, it is a 6-stagetemperature control(customizable)
5 Control mode. Microcontroller
6 Extreme operating temperature 1280℃C
7 Movement speed range ≥0.05mm/hour
8 Range of constant temperature zone >200mm
9 Continuous working hours >720 hours
10 Temperature display accuracy 0.1 ℃
11 Temp Accuracy Better than ± 0.2 °C

Critical for military, aerospace, meteorology, astronomical observation, railway safety, and search & rescue operations.

Application Fields

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Crystals

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  • CZT Crystal
  • Quartz Pendulum Plate
  • Sapphire Pendulum Plate

Equipments

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  • Heat Treatment Equipment
  • Vacuum Coating Equipment

News

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  • Company News
  • Industry News
  • Technical Blog
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本网站支持 IPv6
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