Mainly used in the growth process of semiconductor crystalmaterials, carbon plating treatment on the inner wall of quartzcrucibles can effectively block the reaction between high-tem-perature solution and quartz crucibles, which is conducive tothe production of complete and high-quality single crystals.
Characteristics of Vacuum Carbon Plating Furnace
- Fully automatic control, multi-stage temperature zone heating;
- High temperature control accuracy and good film uniformity;
- Suitable for various sizes of ampoules.
Vacuum Carbon Plating Furnace
Technical Parameters
No. | Product Parameters | Technical Indicators |
1 | Equipment structure | Horizontal/vertical tubular heating furnace |
2 | Heating furnace | The heating furnace adopts a multi-stage heating form, and each group canbe individually controlled for heating. The maximum temperature is 1100 °C and the control accuracy is better than ± 0.3% |
3 | Pipeline heating | Wrap heating clothes around the outside of the pipeline; The valve body iswrapped with a heating jacket, and the pipeline control accuracy is ± 2% |
4 | Automatic program | One click start of equipment (vacuum pumping, pipeline heating), air intake, canedit multiple temperature curve programs, and automatically complete operations according to the process |
Equipped with over temperature alarm, machine abnormality and water shortage alarm functions | ||
5 | Flow control | All metal flow control valve |
6 | Cold trap system | Low temperature cold trap |
7 | Control mode | PLC+touch screen fully automatic control (except for workpiece valves) |
8 | Alarm and protection system | A comprehensive logic program interlocking and protection system, which alarmsand executes corresponding protection measures for abnormal situations such aspumps, water shortages, overcurrent and overvoltage, and circuit breakers. |
Critical for military, aerospace, meteorology, astronomical observation, railway safety, and search & rescue operations.
Application Fields
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