It can be used for the growth and manufacturing of the fourth generation semiconductor single crystal materials, oxide materials such as gallium oxide and Ga2O3 wafers.
Characteristics of oxide single crystal furnace
- Equipment use: Medium frequency heating, crystal growth under high temperature and vacuum conditions,
- Application industry: Semiconductor;
- Automation level: semi-automatic, manually assisted loading of materials, process installation controlled by customer provided process parameters;
- Operation direction: lnstall the heat field, crucible, and raw materials facing the lower side of the equipment, and install the substrate on the upper side;
