CZT Detector | Prosun Semiconductor

The material must exhibit excellent infrared (IR) transmission and mechanical properties, primarily used for manufacturing IR window components. It is designed for applications in infrared imaging systems, infrared guidance systems, and related fields, ensuring optimal IR light transmission while providing robust protection for internal optical elements and detectors.

Cadmium Zinc Telluride (CZT, CdZnTe)

Single Crystal Wafers

for Infrared Applications

Performance Specifications for IR Wafers

Technical Parameters

No.	Product Specifications	Technical Specifications
1	Material	Cd0.96Zn0.04Te
2	Conduction Type	P-Type
3	Wafer Thickness	0.95±0.05mm
4	Primary Surface Orientation	[111] B or Other Crystal Orientations
5	Orientation Deviation Angle	≤0.20
6	X-ray Rocking Curve （FWHM）	≤30rad·s
7	Zn Composition (x in Cd₁₋ₓZnₓTe)	0.04±0.01
8	Precipitate Particle Density (with Radial Size Distribution)	5~10㎛	≤1.0×103/㎠
8		1~5㎛	≤5×103/㎠
9	Etch Pit Density (EPD)	≤5×104/㎠
10	Resistivity (ρ)	≥104Ω·cm
11	IR Transmittance	≥60% (Wavelength Range: 1.5 μm ~ 25 μm)
12	Surface Quality	No residue/scratches on the main surface
13	Surface Roughness (Ra)	≤0.5nm
14	Total Thickness Variation (TTV)	≤5um
15	Packaging	Single-piece vacuum packaging
16	Dimensions	Custom-made

Critical for military, aerospace, meteorology, astronomical observation, railway safety, and search & rescue operations

Application Fields

This material demands extremely high purity, crystal integrity, and charge carrier mobility, primarily used for manufacturing radiation detectors, Primarily used for manufacturing various radiation detectors, including X-ray detectors, gamma-ray detectors, and nuclear radiation detectors，Widely applicable in medical imaging, security inspection, nuclear physics research, and other fields.

Cadmium Zinc Telluride (CZT, CdZnTe)

Single Crystal Wafers

for Nuclear Radiation Applications

Performance Specifications for Nuclear Radiation Detection Wafers

Technical Parameters

No	Product Specifications	Technical Specifications
1	Material	Cd0.90Zn0.10Te
2	Conduction Type	P-Type
3	Wafer Diameter (±0.1mm)	Customizable Dimensions
4	Wafer Thickness (±0.05mm)	1/2/5/Custom-made
5	Crystal Orientation	[111] or other crystal orientations
6	X-ray Rocking Curve （FWHM）	≤30rad·s
7	Zn Composition (x in Cd₁₋ₓZnₓTe)	0.10±0.04
8	Precipitate Density (Particle Size Distribution)	5~10㎛	≤1.0×103/㎠
		1~5㎛	≤5×103/㎠
9	Etch Pit Density (EPD)	≤5×104/cm2
10	Resistivity (ρ)	≥6×1010Ω·cm
11	IR Transmittance	≥60% (wavelength range: 1.5 μm to 25 μm)
12	Surface Roughness (Ra)	Double-side polishing，Ra≤5nm
13	Total Thickness Variation (TTV)	≤15um
14	Leakage Current (ΙLEAK)	≤1nA/mm2（@-600VBias voltage, room temperature）
15	Electron Mobility-Lifetime Product (μτₑ)	≥10-3cm2/V
16	Hole Mobility-Lifetime Product (μτₕ)	≥10-5cm2/V
17	Maximum Photocurrent (Unpolarized)	1000nA（60-second X-ray exposure，120KV）
18	X-ray Response Linearity	≥99%
19	X-ray Response Uniformity	≤10%
20	Energy Resolution	≤6%（Am241@59.5KeV)
21	Dimensions	Custom-made

Widely used in aerospace, nuclear industry, medical imaging, industrial radiography, and related fields

Application Fields

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