VGF Crystal Growth Furnace is mainly used forgrowth of Compound semiconductor mate-rials such as gaas, gaas and GE.
Characteristics of VGF Crystal Growth Furnace:
- Ten years experience in furnace body production technologylong life, stable temperature field.
- Self-development of the third generation of automatic liftingsystem for long crystal stability to enhance protection.
- High Precision Temperature control system, improve the rateof finished products.
- Super Safety Protection and alarm device.
VGF Crystal Growth Furnace
Technical Parameters
| No. | Product Parameters | Technical Indicators |
| 1 | Furnace body structure. | vertical |
| 2 | Type of furnace body | Atmospheric pressure |
| 3 | Applicable size | 2-6 inches (customizable) |
| 4 | Number of heating zones | Generally, it is a 6-stagetemperature control(customizable) |
| 5 | Control mode. | Microcontroller |
| 6 | Extreme operating temperature | 1280℃C |
| 7 | Movement speed range | ≥0.05mm/hour |
| 8 | Range of constant temperature zone | >200mm |
| 9 | Continuous working hours | >720 hours |
| 10 | Temperature display accuracy | 0.1 ℃ |
| 11 | Temp Accuracy | Better than ± 0.2 °C |
Critical for military, aerospace, meteorology, astronomical observation, railway safety, and search & rescue operations.
Application Fields
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